Samsung 16GB DDR5 4800MHz ECC Registered Server Memory — M321R2GA3BB6-CQKEG
The Samsung M321R2GA3BB6-CQKEG is a 16GB DDR5 ECC Registered (RDIMM) server memory module operating at 4800MHz (PC5-38400) with CAS latency CL40 and 1.1V operating voltage. Built on Samsung”s advanced DDR5 architecture, it delivers significantly higher memory bandwidth and improved power efficiency compared to DDR4 — making it ideal for next-generation enterprise servers running virtualization, in-memory databases, AI/ML inference, and high-performance computing workloads. Error-Correcting Code (ECC) technology continuously detects and corrects single-bit memory errors in real time, ensuring data integrity in mission-critical environments. The registered (buffered) design reduces electrical load on the memory controller, enabling stable high-density multi-DIMM configurations across enterprise server platforms.
Key Features
- Next-Gen DDR5 Standard: Higher bandwidth and 20% better power efficiency than DDR4 — future-proof your server infrastructure
- On-Die + System-Level ECC: Dual-layer error correction ensures maximum data integrity for mission-critical workloads
- Registered (Buffered) Design: Enables stable, high-density multi-DIMM server configurations without signal degradation
- Samsung DRAM: Industry-leading manufacturing quality with proven enterprise-grade reliability and longevity
- RoHS Compliant: Meets global environmental and safety standards for enterprise deployments
Technical Specifications
- Part Number: M321R2GA3BB6-CQKEG
- Manufacturer: Samsung
- Memory Type: DDR5 SDRAM
- Module Type: RDIMM (Registered / Buffered)
- Capacity: 16GB
- Speed: 4800MHz (PC5-38400)
- CAS Latency: CL40
- Timing: 40-39-39
- Voltage: 1.1V
- Form Factor: 288-Pin DIMM
- Rank: Single Rank (1Rx8)
- Die Organization: x8
- Data Width: 72-bit (64-bit + 8-bit ECC)
- Error Correction: SECDED (Single-bit correction, Double-bit detection)
- Operating Temperature: 0°C to 85°C
Use Cases
- Virtualization: VMware vSphere, Microsoft Hyper-V, and KVM deployments requiring high memory bandwidth per core
- In-Memory Databases: SAP HANA, Oracle TimesTen, and Redis clusters demanding large, fast memory pools
- AI/ML Inference: GPU-adjacent CPU memory for large language model inference and ML pipeline acceleration
- HPC Clusters: MPI-based scientific computing and simulation workloads requiring maximum inter-node memory throughput
Compatibility
- Compatible with DDR5 RDIMM slots only — not backward compatible with DDR4 platforms
- CQKEG suffix denotes specific OEM or regional server vendor qualification — verify against your server”s memory QVL before ordering
- Do not mix with DDR5 UDIMMs or LRDIMMs in the same system
- For multi-DIMM stability, populate channels with matched capacity, speed, and rank modules
Frequently Asked Questions
- How does DDR5 on-die ECC differ from system-level ECC?
- On-die ECC corrects errors within the DRAM chip itself before data reaches the memory bus — reducing raw bit error rates. System-level ECC then provides an additional layer of SECDED correction at the memory controller, giving DDR5 RDIMMs dual-layer protection not available in DDR4.
- What does the CQKEG qualification suffix indicate?
- Samsung uses qualification suffixes to denote OEM validation, regional certification, or specific server vendor testing. CQKEG identifies this module”s exact qualification tier — always cross-reference with your server vendor”s memory compatibility or QVL list before purchase.
- What is the advantage of Single Rank over Dual Rank for this module?
- Single rank modules offer lower latency per access and are ideal for workloads where per-access speed matters more than aggregate bandwidth. They also simplify memory population in systems with strict rank limits per channel.
Whether you are scaling a virtualization cluster, accelerating in-memory database performance, or building out an AI inference platform, the Samsung M321R2GA3BB6-CQKEG delivers the DDR5 bandwidth, dual-layer ECC protection, and Samsung manufacturing quality your enterprise server infrastructure demands.


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