Samsung 64GB 5600MHz DDR5 PC5-44800 ECC Registered 288-Pin DIMM 1.1V Dual Rank x4 Memory Module – M321R8GA0EB2-CWM

Samsung 64GB DDR5 5600MHz ECC Registered Server Memory — M321R8GA0EB2-CWM

The Samsung M321R8GA0EB2-CWM is a 64GB DDR5 ECC Registered (RDIMM) server memory module operating at 5600MHz (PC5-44800) with 1.1V operating voltage. Built on Samsung”s DDR5 x4 die architecture, this Dual Rank module delivers high-capacity DDR5 memory bandwidth for the most demanding enterprise server workloads including large-scale virtualization, in-memory databases, AI/ML inference, and high-performance computing. DDR5 introduces on-die ECC (ODECC) for enhanced per-chip error detection, complemented by system-level ECC for comprehensive data integrity protection. The registered (buffered) design enables stable high-density multi-DIMM configurations across next-generation enterprise server platforms.

Key Features

• 64GB High-Capacity DDR5: High per-slot capacity for memory-intensive enterprise DDR5 workloads
• 5600MHz DDR5 Performance: PC5-44800 delivers strong next-generation memory bandwidth for enterprise server workloads
• Dual-Layer ECC: On-die ECC (ODECC) plus system-level ECC provides comprehensive error detection and correction
• Registered (Buffered) Design: Enables stable, high-density multi-DIMM server configurations without signal degradation
• Samsung DRAM: Industry-leading manufacturing quality with proven enterprise-grade reliability and longevity

Technical Specifications

• Part Number: M321R8GA0EB2-CWM
• Manufacturer: Samsung
• Memory Type: DDR5 SDRAM
• Module Type: RDIMM (Registered / Buffered)
• Capacity: 64GB
• Speed: 5600MHz (PC5-44800)
• Voltage: 1.1V
• Form Factor: 288-Pin DIMM
• Rank: Dual Rank (2Rx4)
• Die Organization: x4
• Data Width: 72-bit (64-bit + 8-bit ECC)
• Error Correction: On-Die ECC + SECDED system-level ECC
• Operating Temperature: 0°C to 85°C

Use Cases

• Large-Scale Virtualization: VMware vSphere, Microsoft Hyper-V, and KVM deployments requiring high memory capacity per DDR5 server node
• In-Memory Databases: SAP HANA, Oracle TimesTen, and Redis clusters requiring high-capacity DDR5 memory bandwidth
• AI/ML Inference: CPU-side memory for large language model inference and ML pipeline acceleration
• HPC Clusters: MPI-based scientific computing requiring high per-node memory capacity on DDR5 platforms

Compatibility

• Compatible with DDR5 RDIMM slots only — not compatible with DDR4 platforms
• CWM is the qualification code for this Samsung 64GB DDR5 5600MHz Dual Rank x4 RDIMM EB2 series — verify against your server”s memory QVL before ordering
• Do not mix with DDR5 UDIMMs or LRDIMMs in the same system
• For multi-DIMM stability, populate channels with matched capacity, speed, and rank modules

Frequently Asked Questions

Is this module compatible with DDR4 servers?

No — DDR5 and DDR4 are not interchangeable. DDR5 RDIMMs require DDR5-compatible server platforms. Always verify your server”s memory type requirement before ordering.

What is the difference between the EB0 and EB2 revisions?

EB0 and EB2 are Samsung”s internal die revision codes. Both are 64GB DDR5 5600MHz Dual Rank x4 RDIMMs with the same specifications — the revision reflects manufacturing process improvements. Always verify compatibility with your server vendor”s QVL for the specific revision.

What does the CWM qualification code indicate?

CWM is Samsung”s qualification code for this 64GB DDR5 5600MHz Dual Rank x4 RDIMM EB2 series — always verify against your server vendor”s QVL before purchase.

Whether you are deploying large-scale DDR5 virtualization infrastructure, scaling in-memory database capacity, or building AI/ML inference platforms, the Samsung M321R8GA0EB2-CWM delivers the 64GB DDR5 5600MHz performance, dual-layer ECC protection, and Samsung manufacturing quality your enterprise server environment demands.